RN2708JE(TE85L,F) amanani emininingwane Toshiba Electronic Devices and Storage Corporation| www.infortune-zu.com

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Umkhiqizi Ingxenye: RN2708JE(TE85L,F)

Umkhiqizi: Toshiba Electronic Devices and Storage Corporation

Incazelo: TRANS 2PNP PREBIAS 0.1W ESV

Isigaba: imikhiqizo ehlukene ye-semiconductor

Umndeni: transistors - bipolar (bjt) - arrays, pre-biased

Kukhona kusitoki: 17464

Ama-datasheets aku-inthanethi: RN2708JE(TE85L,F) PDF

RN2708JE(TE85L,F)Qaphela

I-HK InFortune Electronics Co., Ltd ingumsabalalisi ozimele wezingxenye ze-elekthronikhi, Sizinikele ekunikezeni amakhasimende izingxenye ze-elekthronikhi kanye nezinsizakalo ezisekelayo. thengisa imikhiqizo emisha neyoqobo futhi unikeze iwaranti yonyaka ongu-1 ngemikhiqizo yethu. Thenga i-RN2708JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation ku-in-fortune.com. Sinezingxenye ezingu-2990 ze-RN2708JE(TE85L,F) esitokisini esitholakalayo manje. Hambisa umbuzo we-RN2708JE(TE85L,F) noma thumela i-imeyili ku-sales@in-fortune.com, sizokuthinta emahoreni angama-24.

uchungechunge:-
iphasela:Tape & Reel (TR)Cut Tape (CT)
isimo sengxenye:Active
uhlobo lwe-transistor:2 PNP - Pre-Biased (Dual)
yamanje - umqoqi (ic) (ubukhulu):100mA
i-voltage - ukuhlukaniswa kwe-emitter yomqoqi (ubukhulu):50V
I-resistor - isisekelo (r1):22kOhms
isisekelo se-resistor - emitter (r2):47kOhms

I-dc current gain (hfe) (min) @ ic, vce:80 @ 10mA, 5V
vce saturation (ubukhulu) @ ib, ic:300mV @ 250µA, 5mA
i-current - cutoff yomqoqi (ubukhulu):100nA (ICBO)
imvamisa - uguquko:200MHz
amandla - max:100mW
uhlobo lokukhweza:Surface Mount
iphakethe/ikesi:SOT-553
iphakheji yedivayisi yomphakeli:ESV

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