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Umkhiqizi Ingxenye: STB10N60M2

Umkhiqizi: STMicroelectronics

Incazelo: MOSFET N-CH 600V 7.5A D2PAK

Isigaba: imikhiqizo ehlukene ye-semiconductor

Umndeni: ama-transistors - ama-fets, ama-mosfets - angashadile

Kukhona kusitoki: 18258

Ama-datasheets aku-inthanethi: STB10N60M2 PDF

STB10N60M2Qaphela

I-HK InFortune Electronics Co., Ltd ingumsabalalisi ozimele wezingxenye ze-elekthronikhi, Sizinikele ekunikezeni amakhasimende izingxenye ze-elekthronikhi kanye nezinsizakalo ezisekelayo. thengisa imikhiqizo emisha neyoqobo futhi unikeze iwaranti yonyaka ongu-1 ngemikhiqizo yethu. Thenga i-STB10N60M2 STMicroelectronics ku-in-fortune.com. Sinezingxenye ezingu-0 ze-STB10N60M2 esitokisini esitholakalayo manje. Hambisa umbuzo we-STB10N60M2 noma thumela i-imeyili [email protected], sizokuthinta emahoreni angama-24.

uchungechunge:MDmesh™ II Plus
iphasela:Tape & Reel (TR)Cut Tape (CT)
isimo sengxenye:Active
uhlobo lwe-fet:N-Channel
ubuchwepheshe:MOSFET (Metal Oxide)
khipha i-voltage yomthombo (vdss):600 V
amanzi amanje - aqhubekayo (id) @ 25°c:7.5A (Tc)
idrayivu ye-voltage (ama-mix rds on, ama-min rds avuliwe):10V
rds ku-(max) @ id, vgs:600mOhm @ 3A, 10V
vgs(th) (ubukhulu) @ id:4V @ 250µA

ukushajwa kwesango (qg) (ubukhulu) @ vgs:13.5 nC @ 10 V
vgs (ubuningi):±25V
amandla okokufaka (ciss) (max) @ vds:400 pF @ 100 V
fet isici:-
ukuchithwa kwamandla (ubukhulu):85W (Tc)
izinga lokushisa lokusebenza:-55°C ~ 150°C (TJ)
uhlobo lokukhweza:Surface Mount
iphakheji yedivayisi yomphakeli:D2PAK
iphakethe/ikesi:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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